THERMAL RESISTANCE DEVICE INCLUDING STRESS CONTROL PATTERN AND MANUFACTURING METHOD THEREOF

A thermal resistance device having a vanadium oxide layer and a method of manufacturing the thermal resistance device are proposed. The device may include a stress control pattern that can improve temperature coefficient of resistance (TCR) characteristics. The thermal resistance device may include a support comprising silicon and having an opening formed in a center thereof, and a silicon oxynitride layer formed on the support to cover the opening. The thermal resistance device may also include the stress control pattern formed of a patterned metal material on the silicon oxynitride layer over the opening. The thermal resistance device may further include the vanadium oxide layer formed to cover the stress control pattern and receiving tensile stress from the stress control pattern.