REFLECTIVE MASK BLANK

A reflective mask blank which is a material for a reflective mask used in EUV lithography in which EUV light is exposure light, including a substrate, a reflective multilayer film that is formed on one main surface of the substrate, has a periodically laminated structure in which layers having a com...

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Bibliographische Detailangaben
Hauptverfasser:	KOSAKA, Takuro, OGOSE, Taiga
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	A reflective mask blank which is a material for a reflective mask used in EUV lithography in which EUV light is exposure light, including a substrate, a reflective multilayer film that is formed on one main surface of the substrate, has a periodically laminated structure in which layers having a comparatively low refractive index with respect to exposure light and layers having a comparatively high refractive index with respect to the exposure light are alternately laminated, and reflects the exposure light, a protection film that is formed in contact with the reflective multilayer film, and an absorber film that is formed in contact with the protection film, absorbs the exposure light, and has a film stress of not more than a film stress in the case of forming the absorber film directly on the substrate.