METHOD AND APPARATUS FOR MEASURING ROTATIONAL SPEED OF SATELLITE DISK ON MOCVD PLANETARY SUSCEPTOR

A method for measuring a rotational speed of a satellite disk on a MOCVD planetary susceptor includes emitting a beam of laser light on the MOCVD equipment, the laser light irradiating on the planetary susceptor of the MOCVD equipment. As the planetary susceptor is revolving, the laser light is irra...

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Bibliographische Detailangaben
Hauptverfasser:	HUANG, Wenyong, MA, Tiezhong, YAN, Hua, NI, Xudong
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASURING MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK METALLURGY PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING
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Beschreibung
Zusammenfassung:	A method for measuring a rotational speed of a satellite disk on a MOCVD planetary susceptor includes emitting a beam of laser light on the MOCVD equipment, the laser light irradiating on the planetary susceptor of the MOCVD equipment. As the planetary susceptor is revolving, the laser light is irradiating on a satellite disk and wafers on the satellite disk, splitting and converting the reflected laser light into an electrical signal and sampling the electrical signal at a fixed frequency within a time period of two trigger pulse signals to obtain an angle revolved by the planetary susceptor for each sampling. The rotational speed of the satellite disk is obtained by calculating variation between Φ0 to Φ1, wherein the rotation angle of Φ0 is obtained when the edge of the wafer enters a viewport, and Φ1 is calculated when the edge of the same wafer leaves the viewport.