METHOD FOR PRODUCING PILLAR-SHAPED SEMICONDUCTOR DEVICE

A method for producing a pillar-shaped semiconductor device having both a CSGT mainly used in a memory cell and an ESGT used in a peripheral circuit is proposed. For a highly integrated CSGT, patterning is used 2 times in total in the X-direction and the Y-direction perpendicular to each other to fo...

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Bibliographische Detailangaben
Hauptverfasser:	KANAZAWA, Kenichi, LI, Yisuo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for producing a pillar-shaped semiconductor device having both a CSGT mainly used in a memory cell and an ESGT used in a peripheral circuit is proposed. For a highly integrated CSGT, patterning is used 2 times in total in the X-direction and the Y-direction perpendicular to each other to form the CSGT in an overlap of band-shaped sidewalls each formed in each patterning. For an ESGT, two rectangular frame-shaped sidewalls are formed at desired positions, and the ESGT is formed in an overlap of the sidewalls. This enables formation of both the CSGT and the ESGT in the same production process under the same production conditions.