DIFFERENTIAL SUSPENDED SINGLE-LAYER GRAPHENE NANOPORE SENSOR, AND PREPARATION METHOD THEREFOR AND USE THEREOF

Provided is a preparation method for a differential suspended single-layer graphene nanopore sensor. The method includes: forming a SiO2 layer on a silicon substrate layer, and etching a side of the silicon substrate layer facing away from the SiO2 layer to form a groove; forming a graphene strip un...

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Hauptverfasser:	ZHAO, Shuaiyi, XIE, Siqi, ZHU, Hongxin, WANG, Haidong, ZHOU, Yaohong
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY TESTING
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Beschreibung
Zusammenfassung:	Provided is a preparation method for a differential suspended single-layer graphene nanopore sensor. The method includes: forming a SiO2 layer on a silicon substrate layer, and etching a side of the silicon substrate layer facing away from the SiO2 layer to form a groove; forming a graphene strip unit on the SiO2 layer, the graphene strip unit including two single-layer grapheme stripes arranged at an interval and stretched across the groove; depositing a metal electrode layer, the electrode layer formed at one side of the groove covering the two single-layer grapheme stripes simultaneously, the electrode layer formed at another side of the groove including two parts arranged at an interval and each covering one of the two single-layer graphene strips; etching away the silicon dioxide layer that is exposed in the region of the groove; and punching nanopores in one of the two single-layer graphene strips suspending.