COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT

Disclosed are complementary field effect transistors (CFETs) with balanced n and p drive current, and methods for making the same. In an aspect, a CFET structure comprises an nFET with horizontal p-doped nanosheet channels arranged in a first vertical stack, each horizontal p-doped nanosheet channel having a width W1, and connecting a first source contact to a first drain contact through a first gate-all-around (GAA) region having a length L1. The CFET structure further comprises a pFET with horizontal n-doped nanosheet channels arranged in a second vertical stack disposed on the first vertical stack, each horizontal n-doped nanosheet channel having a width W2, and connecting a second source contact to a second drain contact through a second GAA region having a length L2, wherein W2/L2 is not equal to W1/L1.