SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device includes a channel layer, a lower barrier layer on the channel layer and including first impurities, an upper barrier layer arranged on the lower barrier layer and including second impurities having a concentration greater than a concentration of the first impurities, a gate e...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: PARK, Junhyuk, KIM, Joonyong, KIM, Boram, OH, Jaejoon, KIM, Jongseob, HWANG, Sunkyu
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a channel layer, a lower barrier layer on the channel layer and including first impurities, an upper barrier layer arranged on the lower barrier layer and including second impurities having a concentration greater than a concentration of the first impurities, a gate electrode on the upper barrier layer, a gate semiconductor layer between the upper barrier layer and the gate electrode, and a source and a drain that are on the channel layer and are spaced apart from each other.