SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

According to one embodiment, a semiconductor memory device includes a stacked body including a first and second stacked portions including first and second conductive layers and having first and second end portions stepwise processed, a first and second interlayer insulating layers covering the firs...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NOMACHI, Akiko, NAGASHIMA, Hidenobu, MATSUDA, Toru, ISHIDA, Tatsuya, OKUMURA, Yusuke
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:According to one embodiment, a semiconductor memory device includes a stacked body including a first and second stacked portions including first and second conductive layers and having first and second end portions stepwise processed, a first and second interlayer insulating layers covering the first and second end portions, a first stopper insulating layer provided at least between the first and second interlayer insulating layers and above the first end portion, including a first portion extending flat above the first end portion, and first contacts penetrating the second interlayer insulating layer, the first portion of the first stopper insulating layer and the first interlayer insulating layer, and connected to different first conductive layers.