SKIP VIA WITH DISCONTINUOUS DIELECTRIC CAP

One or more systems, devices, and/or methods of fabrication provided herein relate to semiconductor devices with discontinuous dielectric caps. According to one embodiment, a semiconductor device can comprise a first level of interconnect wiring, a second level of interconnect wiring, a third level...

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Bibliographische Detailangaben
Hauptverfasser: Clevenger, Lawrence A, Lanzillo, Nicholas Anthony, Xie, Ruilong, Motoyama, Koichi
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:One or more systems, devices, and/or methods of fabrication provided herein relate to semiconductor devices with discontinuous dielectric caps. According to one embodiment, a semiconductor device can comprise a first level of interconnect wiring, a second level of interconnect wiring, a third level of interconnect wiring, a discontinuous dielectric cap over the second level of interconnect wiring and a skip via connecting the first level of interconnect wiring to the third level of interconnect wiring.