CONTACT LAYER FORMATION WITH MICROWAVE ANNEALING FOR NMOS DEVICES

CONTACT LAYER FORMATION WITH MICROWAVE ANNEALING FOR NMOS DEVICES

A method of forming an electrical contact in semiconductor structure includes performing a selective deposition process on a semiconductor structure having a semiconductor region and a dielectric layer having a trench therewithin, the selective deposition process comprising epitaxially forming a con...

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Bibliographische Detailangaben
Hauptverfasser: BREIL, Nicolas Louis, ADERHOLD, Wolfgang R, SHARMA, Shashank, PRADHAN, Nilay Anil
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method of forming an electrical contact in semiconductor structure includes performing a selective deposition process on a semiconductor structure having a semiconductor region and a dielectric layer having a trench therewithin, the selective deposition process comprising epitaxially forming a contact layer on the semiconductor region within the trench of the dielectric layer, and performing a microwave anneal process to activate dopants in the epitaxially formed contact layer.