LATERAL HETEROSTRUCTURE ISOLATED COUPLED QUANTUM DOTS

A method for forming a semiconductor structure comprising isolated coupled quantum dots defining a physical spin qubit is disclosed. The method comprises structuring the doped silicon layer using an SIO substrate with a source area structure, a linear structure extending from the source area, gate structures extending vertically to a main extension direction of the linear structure, covering the structures with an oxide, removing the oxide at a lateral end of the linear structure, laterally etching back the linear structure between the blanket oxide and the SOI isolator, epitaxial filling the hollow template with a first semiconductor material different from the silicon, continuing the epitaxial and laterally filling the hollow template with an alternating sequence of lateral thin layers of a second and a third semiconductor material, and continuing the epitaxial filling the hollow template with the first semiconductor material until an end of the hollow template is reached.