PHOTODIODE WITH DEEP TRENCH ISOLATION STRUCTURES

A photodiode device includes a semiconductor substrate, a plurality of pixels, each of the pixels including a diode structure on a first side of the substrate and a conductive layer on a second side of the substrate, and DTI structures isolating adjacent pixels from one another, the DTI structures including a conductive material that electrically couples the conductive layer on the second side of the substrate and a metal line on the first side of the substrate. The conductive material in the DTI structures is part of an electrode circuit for the pixels.