SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS

SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS

A semiconductor structure includes a first metallization layer having a first plurality of metal containing lines, and a second metallization layer located above the first metallization layer. The second metallization layer includes a second plurality of metal containing lines. A first group of the...

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Bibliographische Detailangaben
Hauptverfasser: Xie, Ruilong, Lanzillo, Nicholas Anthony, Motoyama, Koichi, Gluschenkov, Oleg
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor structure includes a first metallization layer having a first plurality of metal containing lines, and a second metallization layer located above the first metallization layer. The second metallization layer includes a second plurality of metal containing lines. A first group of the second plurality of metal containing lines is disposed within the first metallization layer. The first group of the second plurality of metal containing lines is isolated from the first metallization layer by a dielectric barrier layer.