TWO STEP IMPLANT TO CONTROL TIP-TO-TIP DISTANCE BETWEEN TRENCHES

Methods of processing patterned photoresist to control tip-to-tip distance on a semiconductor workpiece are disclosed. The method is performed after the photoresist has been patterned and before the etching process is commenced. Two implants, using different species, are performed at high tilt angles. In certain embodiments, the tilt angle may be 45° or more. Further, the implants are performed at twist angles such that the trajectory of the ions is nearly parallel to the patterned photoresist lines. In this way, the ions from the two implants glance the top and sidewalls of the photoresist lines. Using this technique, the tip-to-tip distance between patterned photoresist lines may be reduced with minimal impact on the CD.