PLASMA PROCESSING METHOD
Provided is a plasma processing method capable of suppressing the diffusion of contamination to a transportation system while forming a deposited film on the inner wall of a processing chamber. The plasma processing method, in which a sample placed on a sample table is plasma-processed in a processi...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | Provided is a plasma processing method capable of suppressing the diffusion of contamination to a transportation system while forming a deposited film on the inner wall of a processing chamber. The plasma processing method, in which a sample placed on a sample table is plasma-processed in a processing chamber, includes: a first step of removing deposits in the processing chamber by using plasma; a second step of depositing the deposits in the processing chamber by using a mixed gas of hydrofluorocarbon gas and argon (Ar) gas after the first step; a third step of selectively removing the deposits on the sample table by using a mixed gas of oxygen (O2) gas and argon (Ar) gas after the second step; and a fourth step of plasma-processing a predetermined number of sheets of the sample after the third step. |
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