FILM FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS

A film forming method forms a film containing at least silicon and oxygen on a substrate. The film forming method includes: a) supplying a metal containing catalyst to the substrate; b) supplying a hydrogen containing gas to the substrate; and c) supplying a silicon precursor containing silanol to t...

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Bibliographische Detailangaben
Hauptverfasser:	SAKAI, Shuichiro, MURAKAMI, Hiroki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A film forming method forms a film containing at least silicon and oxygen on a substrate. The film forming method includes: a) supplying a metal containing catalyst to the substrate; b) supplying a hydrogen containing gas to the substrate; and c) supplying a silicon precursor containing silanol to the substrate.