MEMORY DEVICE AND OPERATING METHOD THEREOF

A memory device is provided. The memory device includes: memory cells respectively connected with word lines; first ground selection transistors connected with a first ground selection line programmed to have a first threshold voltage; second ground selection transistors connected with a second grou...

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Bibliographische Detailangaben

Hauptverfasser:	KIM, Seungbum, CHOI, Yonghyuk
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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