FERROELECTRIC FIELD EFFECT TRANSISTORS BASED APPROACH FOR EUCLIDEAN DISTANCE CALCULATION IN NEUROMORPHIC HARDWARE

An apparatus may comprise a synapse comprising a first reconfigurable field-effect transistor; a second reconfigurable field-effect transistor connected in parallel to the first reconfigurable field-effect transistor; an input voltage applied to each of the first reconfigurable field-effect transist...

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Bibliographische Detailangaben
Hauptverfasser: Barve, Siddharth, Jha, Rashmi
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An apparatus may comprise a synapse comprising a first reconfigurable field-effect transistor; a second reconfigurable field-effect transistor connected in parallel to the first reconfigurable field-effect transistor; an input voltage applied to each of the first reconfigurable field-effect transistor and the second reconfigurable field-effect transistor corresponding to an input attribute associated with an error computation; and a current sensor measures a saturation drain current of the first reconfigurable field-effect transistor and the second reconfigurable field-effect transistor and determines a Euclidean error based on the saturation drain current of the FETs