POLYMER, PHOTOSENSITIVE COMPOSITION, DRY FILM PHOTORESIST, AND LITHOGRAPHY METHOD

A polymer is formed by a reaction of phenolic epoxy resin or bisphenol epoxy resin and carboxylic acid, wherein the phenolic epoxy resin has a chemical structure ofwherein W is H, alkyl group, or halogen. R1 is methylene, methylene diphenyl, dimethylene benzene, tetrahydrodicyclopentadiene, orn=1 to...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	CHANG, Chin-Hua, HSU, Yu-Ying, HUANG, Yao-Jheng, WU, Ming-Tzung, CHANG, Te-Yi
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	A polymer is formed by a reaction of phenolic epoxy resin or bisphenol epoxy resin and carboxylic acid, wherein the phenolic epoxy resin has a chemical structure ofwherein W is H, alkyl group, or halogen. R1 is methylene, methylene diphenyl, dimethylene benzene, tetrahydrodicyclopentadiene, orn=1 to 8. The bisphenol epoxy resin has a chemical structure ofwherein Z is H or alkyl group; R4 is methylene, methylmethylene, dimethylmethylene, ethylmethylmethylene, bi(trifluoromethyl)methylene, fluorenylidene, or sulfonyl group; and p=1 to 10. The carboxylic acid has a chemical structure of HOOC-Ar-(-X)m, HOOC-R2, or a combination thereof, wherein Ar is benzene or naphthalene; X is hydroxy group, alkoxy group, or alkyl group, and at least one X is hydroxy group; m=1 to 3, wherein R2 is C3-7 alkyl group.