FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

A semiconductor device includes a fin structure disposed over a substrate. The semiconductor device includes a gate dielectric layer disposed over the fin structure. The semiconductor device includes an interfacial layer over a top portion of the gate dielectric layer. A bottom portion of gate diele...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chuang, Ying-Liang, Huang, Kuo-Bin, PAN, Yu-Chi, Yeh, Ming-Hsi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a fin structure disposed over a substrate. The semiconductor device includes a gate dielectric layer disposed over the fin structure. The semiconductor device includes an interfacial layer over a top portion of the gate dielectric layer. A bottom portion of gate dielectric layer is free of contact with the interfacial layer. The semiconductor device includes a gate structure straddling the fin structure.