DEVICES, METHODS, AND SYSTEMS FOR A MULTILEVEL MEMORY CELL

Disclosed herein are devices, methods, and systems for reading/writing memory cells of a memory, where the memory cells includes a memory element that is writable to at least three different remanent polarization states. A sensing circuit determines, in a read operation, a stored state of the memory element from among the at least three different remanent polarization states based on a sensed change in a remanent polarization of the memory element caused by an applied read voltage. A biasing circuit applies, in a write operation, apply a bias voltage level across the memory element to (re)write the memory element to the stored state.