WORDLINE CONTACT FORMATION FOR NAND DEVICE

Disclosed are approaches for direct wordline contact formation for 3D NAND devices. One method may include providing a first film stack comprising a first plurality of alternating first layers and second layers, and forming a first plurality of contact openings in the first film stack, wherein each...

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Bibliographische Detailangaben

Hauptverfasser:	LEE, HsiangYu, SUN, Changwoo, SUBRAHMANYAN, Pradeep
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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