WORDLINE CONTACT FORMATION FOR NAND DEVICE

Disclosed are approaches for direct wordline contact formation for 3D NAND devices. One method may include providing a first film stack comprising a first plurality of alternating first layers and second layers, and forming a first plurality of contact openings in the first film stack, wherein each contact opening is formed to a different etch depth. The method may further include forming a sacrificial gapfill within the first plurality of contact openings, and forming a second film stack atop the first film stack, wherein the second film stack comprises a second plurality of alternating first layers and second layers. The method may further include forming a second plurality of contact openings in the second film stack, wherein a first set of contact openings of the second plurality of contact openings extends to the sacrificial gapfill, and removing the sacrificial gapfill from the first plurality of contact openings.