PARAMETER CALIBRATION FOR SIMULATION OF A TRANSISTOR DESIGN

A system and method generates a model for a transistor design and simulates a transistor design using the model. A two-dimensional model of a transistor design is obtained. A density-gradient model for a channel of the transistor design is determined based on the two-dimensional model to generate a first set of parameters. A long-channel mobility model for the channel of the transistor design is determined based on the two-dimensional model to generate a second set of parameters. Further, a ballistic model and high-field saturation model of the transistor design are determined based on the first set of parameters and the second set of parameters to generate a third set of parameters. The third set of parameters are output to a memory device.