THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD FOR IMPROVED YIELD AND RELIABILITY

THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD FOR IMPROVED YIELD AND RELIABILITY

A 3D memory device includes a conductor/insulator stack containing a conductive layer and a dielectric layer alternatingly stacked, channel hole structures in a first region of memory cells in the conductor/insulator stack, a blocking structure adjacent to the first region, and a dummy channel hole...

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Bibliographische Detailangaben
Hauptverfasser: HUO, Zongliang, WU, Linchun, HAN, Yuhui, ZHANG, Kun, XIA, Zhiliang, ZHOU, Wenxi, SUN, Changzhi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A 3D memory device includes a conductor/insulator stack containing a conductive layer and a dielectric layer alternatingly stacked, channel hole structures in a first region of memory cells in the conductor/insulator stack, a blocking structure adjacent to the first region, and a dummy channel hole structure in the first region. The dummy channel hole structure is adjacent to the blocking structure, and includes a dielectric material that fills a channel hole to form a first dielectric filling structure.