CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

A semiconductor device includes an epitaxial layer and a doped region located in the epitaxial layer. A contact structure of the semiconductor device includes: an interlayer dielectric layer, arranged on the epitaxial layer; a contact hole, including a first portion extending through the interlayer...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Wang, Chenhan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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