CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

A semiconductor device includes an epitaxial layer and a doped region located in the epitaxial layer. A contact structure of the semiconductor device includes: an interlayer dielectric layer, arranged on the epitaxial layer; a contact hole, including a first portion extending through the interlayer dielectric layer and a second portion extending into the doped region, where a size of the first portion is greater than a size of the second portion, the second portion is open on a bottom surface of the first portion, and a bottom surface of the second portion is arranged in the doped region; a contact layer, including a first contact layer arranged on the bottom surface of the first portion and a second contact layer arranged on the bottom surface of the second portion; and a conductive channel, arranged in the contact hole and contacting the contact layer.