SEMICONDUCTOR STRUCTURE HAVING DEEP TRENCH CAPACITOR AND METHOD OF MANUFACTURING THEREOF

A semiconductor structure includes a substrate including a recess indented into the substrate, a capacitor structure at least partially disposed within the recess, and an interconnect structure disposed over and electrically connected to the capacitor structure. The capacitor structure includes a first electrode layer, a second electrode layer over the first electrode layer, and a first dielectric between the first electrode layer and the second electrode layer. The first electrode layer includes a first body portion disposed in and conformal to the recess and a first extending portion disposed on the substrate, and the second electrode layer covers the first dielectric, the first body portion and the first extending portion of the first electrode layer.