STACKED INTEGRATED CIRCUITS WITH REDISTRIBUTION LINES

STACKED INTEGRATED CIRCUITS WITH REDISTRIBUTION LINES

A method includes bonding a first wafer to a second wafer, with a first plurality of dielectric layers in the first wafer and a second plurality of dielectric layers in the second wafer bonded between a first substrate of the first wafer and a second substrate in the second wafer. A first opening is...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Yaung, Dun-Nian, Tsai, Ying-Ling, Ho, Cheng-Ying, Hsu, Wen-I, Hung, Feng-Chi, Lin, Jeng-Shyan
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method includes bonding a first wafer to a second wafer, with a first plurality of dielectric layers in the first wafer and a second plurality of dielectric layers in the second wafer bonded between a first substrate of the first wafer and a second substrate in the second wafer. A first opening is formed in the first substrate, and the first plurality of dielectric layers and the second wafer are etched through the first opening to form a second opening. A metal pad in the second plurality of dielectric layers is exposed to the second opening. A conductive plug is formed extending into the first and the second openings.