Silicon Etching Solution, Method for Treating Substrate, and Method for Manufacturing Silicon Device
An etching solution has a high etching selectivity of silicon with respect to silicon-germanium and having high stability over time at a treating temperature in surface processing in manufacturing various semiconductor devices, particularly in various silicon composite semiconductor devices containi...
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| Zusammenfassung: | An etching solution has a high etching selectivity of silicon with respect to silicon-germanium and having high stability over time at a treating temperature in surface processing in manufacturing various semiconductor devices, particularly in various silicon composite semiconductor devices containing silicon-germanium. The silicon etching solution contains a compound having at least one carboxy group and having all pKa of 3.5 or more and 13 or less, or a salt thereof; an organic alkali; and water. |
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