BATCH PROCESSING CHAMBERS FOR PLASMA-ENHANCED DEPOSITION

Embodiments of the disclosure are directed to PEALD batch processing chambers. Some embodiments are directed to processing chambers having one or more inductively coupled plasma (ICP) coils electrically connected to at least one RF power source. Some embodiments are directed to processing chambers h...

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Bibliographische Detailangaben
Hauptverfasser:	Sansoni, Steven V, Sriram, Mandyam, Fu, Jianming, Baluja, Sanjeev, Gung, Tza-Jing, Wang, Haitao, Gandikota, Srinivas
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Embodiments of the disclosure are directed to PEALD batch processing chambers. Some embodiments are directed to processing chambers having one or more inductively coupled plasma (ICP) coils electrically connected to at least one RF power source. Some embodiments are directed to processing chambers having a wafer cassette comprising a plurality of platforms, each platform configured to support at least one wafer for processing, and one or more RF power sources electrically connected to the plurality of platforms in the wafer cassette. In some embodiments, the plurality of platforms have a first set of electrodes having a first polarity and a second set of electrodes having a second polarity, and one or more RF power sources electrically connected to the plurality of platforms in the wafer cassette.