PHOTORESIST AND FORMATION METHOD THEREOF

PHOTORESIST AND FORMATION METHOD THEREOF

A photoresist composition includes a mixture. The mixture includes a first photosensitive material and a second photosensitive material. The first photosensitive material is a 6-Sn oxide cluster, a 12-Sn oxide cluster or a combination thereof. The second photosensitive material has a composition bei...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHEN, Po-Hsiung, LIU, Jui-Hsiung, LIN, Burn Jeng, WU, Yan-Ru, GAU, Tsai-Sheng, LIN, Ting-An, TSAI, Han-Tsung
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A photoresist composition includes a mixture. The mixture includes a first photosensitive material and a second photosensitive material. The first photosensitive material is a 6-Sn oxide cluster, a 12-Sn oxide cluster or a combination thereof. The second photosensitive material has a composition being different from a composition of the first photosensitive material.