WAFER PROCESSING APPARATUS AND WAFER DICING METHOD

Provided is a wafer processing apparatus including a laser source for generating a laser beam including a plurality of pulses, a wafer support configured to support a wafer, and a beam transmission optical system for transferring the laser beam output from the laser source to the wafer, wherein the...

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Bibliographische Detailangaben
Hauptverfasser: KWON, Youngchul, KIM, Goonwoo
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Provided is a wafer processing apparatus including a laser source for generating a laser beam including a plurality of pulses, a wafer support configured to support a wafer, and a beam transmission optical system for transferring the laser beam output from the laser source to the wafer, wherein the laser source sets parameters of the laser beam so that the laser beam is collected inside the wafer by a self-condensing phenomenon while moving along the inside of the wafer.