SOLID-STATE IMAGING DEVICE

A solid-state imaging device is provided that enables miniaturization of a pixel and improvement in electrical properties of a transistor of a pixel circuit. The solid-state imaging device includes a first semiconductor layer and a second semiconductor layer. In the first semiconductor layer, a pixel including a photoelectric converter is arranged in a matrix along a plane direction. The number of the pixel is two or more. The second semiconductor layer is stacked on the first semiconductor layer on an opposite side to a light-incoming side of the pixel. In the second semiconductor layer, a first transistor electrically coupled to the pixel is provided. A gate lengthwise direction of the first transistor is inclined with respect to an arrangement direction of the pixel.