INTERLEAVED HIGH SIDE AND LOW SIDE POWER TRANSISTORS WITH VARIABLE FINGER SPACING

INTERLEAVED HIGH SIDE AND LOW SIDE POWER TRANSISTORS WITH VARIABLE FINGER SPACING

An integrated circuit includes a first transistor array over a semiconductor substrate and is distributed among a first plurality of first transistor banks. A second transistor array in or over the semiconductor substrate is distributed among a second plurality of second transistor banks. A first on...

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Bibliographische Detailangaben
Hauptverfasser: Venugopal, Archana, Edwards, Henry L, Gibson, Neil, Schaeffer, VIOLA, Gradl, Gerald, Doorenbos, Jerry L
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit includes a first transistor array over a semiconductor substrate and is distributed among a first plurality of first transistor banks. A second transistor array in or over the semiconductor substrate is distributed among a second plurality of second transistor banks. A first one of the first transistor banks is located between a first one and a second one of the second transistor banks, and the second one of the second transistor banks is located between the first one of the first transistor banks and a second one of the first transistor banks. The first transistor array and the second transistor array may be alternately operated to implement a voltage-conversion integrated circuit.