WAFER TYPE MEASURING APPARATUS AND MAGNETIC FLUX DENSITY MEASURING METHOD USING THE SAME

WAFER TYPE MEASURING APPARATUS AND MAGNETIC FLUX DENSITY MEASURING METHOD USING THE SAME

Provided are a wafer-type measuring apparatus capable of accurately measuring the magnetic flux density in a process chamber without opening the process chamber, and a magnetic flux density measuring method using the wafer-type measuring apparatus. The wafer-type measuring apparatus includes a wafer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHAE, Sujin, HWANG, Jeongmo, AHN, Dongok, HA, Sangmin, BANG, Youngsik, SON, Sanghyun, SEO, Yongjun
Format: Patent
Sprache:eng
Schlagworte:
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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Beschreibung
Zusammenfassung:Provided are a wafer-type measuring apparatus capable of accurately measuring the magnetic flux density in a process chamber without opening the process chamber, and a magnetic flux density measuring method using the wafer-type measuring apparatus. The wafer-type measuring apparatus includes a wafer-type substrate, magnetic flux density sensors disposed on the wafer-type substrate and configured to measure a magnetic flux density, a power supply disposed on the substrate and configured to supply power to the magnetic flux density sensors, a microcontroller unit (MCU) disposed on the substrate and configured to signal process the measured magnetic flux density, and a wireless communication module disposed on the substrate and configured to transmit a signal from the MCU to the outside, and measure the magnetic flux density in a process chamber using a magnetic field.