SPIN ORBIT TORQUE MAGNETIC MEMORY DEVICES, OPERATING METHODS THEREOF, AND ELECTRONIC APPARATUSES INCLUDING THE MAGNETIC MEMORY DEVICES

Disclosed are a spin orbit torque (SOT) magnetic memory device, an operating method thereof, and an electronic apparatus including the SOT magnetic memory device. The SOT magnetic memory device includes a first SOT layer, a magnetic tunnel junction (MTJ) layer on one surface of the first SOT layer,...

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Hauptverfasser:	Okada, Atsushi, MIZUSAKI, Soichiro, Ryu, Jeongchun, Kim, Kwangseok
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES STATIC STORES TRANSFORMERS
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creator	Okada, Atsushi MIZUSAKI, Soichiro Ryu, Jeongchun Kim, Kwangseok
description	Disclosed are a spin orbit torque (SOT) magnetic memory device, an operating method thereof, and an electronic apparatus including the SOT magnetic memory device. The SOT magnetic memory device includes a first SOT layer, a magnetic tunnel junction (MTJ) layer on one surface of the first SOT layer, and an SOT-based local magnetic field generation layer to cross the first SOT layer and including a generating region configured to generate a magnetic field that reaches the MTJ layer; and an upper electrode layer disposed to face the first SOT layer with the MTJ layer therebetween and in contact with the MTJ layer. The SOT magnetic memory device includes five operating terminals.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024147868A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024147868A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024147868A13</originalsourceid><addsrcrecordid>eNqNjLEKwjAURbs4iPoPD1wr2CraNSavbaBNYvIiOJUicRIt1G_wu43gKjjd4Zxzp8nLGalA24MkIG2PHqFllUKSHFpstT2DwJPk6FLQBi0jqapIqNbCAdVoUZcpMCUAG-RktYolM4ZF1Tt0IBVvvPhU0f51Pk8m1_42hsV3Z8myROL1KgyPLoxDfwn38Oy8y9f5Ntvui13Bss1_1hvu4D77</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SPIN ORBIT TORQUE MAGNETIC MEMORY DEVICES, OPERATING METHODS THEREOF, AND ELECTRONIC APPARATUSES INCLUDING THE MAGNETIC MEMORY DEVICES</title><source>esp@cenet</source><creator>Okada, Atsushi ; MIZUSAKI, Soichiro ; Ryu, Jeongchun ; Kim, Kwangseok</creator><creatorcontrib>Okada, Atsushi ; MIZUSAKI, Soichiro ; Ryu, Jeongchun ; Kim, Kwangseok</creatorcontrib><description>Disclosed are a spin orbit torque (SOT) magnetic memory device, an operating method thereof, and an electronic apparatus including the SOT magnetic memory device. The SOT magnetic memory device includes a first SOT layer, a magnetic tunnel junction (MTJ) layer on one surface of the first SOT layer, and an SOT-based local magnetic field generation layer to cross the first SOT layer and including a generating region configured to generate a magnetic field that reaches the MTJ layer; and an upper electrode layer disposed to face the first SOT layer with the MTJ layer therebetween and in contact with the MTJ layer. The SOT magnetic memory device includes five operating terminals.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRICITY ; INDUCTANCES ; INFORMATION STORAGE ; MAGNETS ; PHYSICS ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; STATIC STORES ; TRANSFORMERS</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240502&DB=EPODOC&CC=US&NR=2024147868A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240502&DB=EPODOC&CC=US&NR=2024147868A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Okada, Atsushi</creatorcontrib><creatorcontrib>MIZUSAKI, Soichiro</creatorcontrib><creatorcontrib>Ryu, Jeongchun</creatorcontrib><creatorcontrib>Kim, Kwangseok</creatorcontrib><title>SPIN ORBIT TORQUE MAGNETIC MEMORY DEVICES, OPERATING METHODS THEREOF, AND ELECTRONIC APPARATUSES INCLUDING THE MAGNETIC MEMORY DEVICES</title><description>Disclosed are a spin orbit torque (SOT) magnetic memory device, an operating method thereof, and an electronic apparatus including the SOT magnetic memory device. The SOT magnetic memory device includes a first SOT layer, a magnetic tunnel junction (MTJ) layer on one surface of the first SOT layer, and an SOT-based local magnetic field generation layer to cross the first SOT layer and including a generating region configured to generate a magnetic field that reaches the MTJ layer; and an upper electrode layer disposed to face the first SOT layer with the MTJ layer therebetween and in contact with the MTJ layer. The SOT magnetic memory device includes five operating terminals.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>INFORMATION STORAGE</subject><subject>MAGNETS</subject><subject>PHYSICS</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>STATIC STORES</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKwjAURbs4iPoPD1wr2CraNSavbaBNYvIiOJUicRIt1G_wu43gKjjd4Zxzp8nLGalA24MkIG2PHqFllUKSHFpstT2DwJPk6FLQBi0jqapIqNbCAdVoUZcpMCUAG-RktYolM4ZF1Tt0IBVvvPhU0f51Pk8m1_42hsV3Z8myROL1KgyPLoxDfwn38Oy8y9f5Ntvui13Bss1_1hvu4D77</recordid><startdate>20240502</startdate><enddate>20240502</enddate><creator>Okada, Atsushi</creator><creator>MIZUSAKI, Soichiro</creator><creator>Ryu, Jeongchun</creator><creator>Kim, Kwangseok</creator><scope>EVB</scope></search><sort><creationdate>20240502</creationdate><title>SPIN ORBIT TORQUE MAGNETIC MEMORY DEVICES, OPERATING METHODS THEREOF, AND ELECTRONIC APPARATUSES INCLUDING THE MAGNETIC MEMORY DEVICES</title><author>Okada, Atsushi ; MIZUSAKI, Soichiro ; Ryu, Jeongchun ; Kim, Kwangseok</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024147868A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>INFORMATION STORAGE</topic><topic>MAGNETS</topic><topic>PHYSICS</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>STATIC STORES</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>Okada, Atsushi</creatorcontrib><creatorcontrib>MIZUSAKI, Soichiro</creatorcontrib><creatorcontrib>Ryu, Jeongchun</creatorcontrib><creatorcontrib>Kim, Kwangseok</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Okada, Atsushi</au><au>MIZUSAKI, Soichiro</au><au>Ryu, Jeongchun</au><au>Kim, Kwangseok</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SPIN ORBIT TORQUE MAGNETIC MEMORY DEVICES, OPERATING METHODS THEREOF, AND ELECTRONIC APPARATUSES INCLUDING THE MAGNETIC MEMORY DEVICES</title><date>2024-05-02</date><risdate>2024</risdate><abstract>Disclosed are a spin orbit torque (SOT) magnetic memory device, an operating method thereof, and an electronic apparatus including the SOT magnetic memory device. The SOT magnetic memory device includes a first SOT layer, a magnetic tunnel junction (MTJ) layer on one surface of the first SOT layer, and an SOT-based local magnetic field generation layer to cross the first SOT layer and including a generating region configured to generate a magnetic field that reaches the MTJ layer; and an upper electrode layer disposed to face the first SOT layer with the MTJ layer therebetween and in contact with the MTJ layer. The SOT magnetic memory device includes five operating terminals.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES STATIC STORES TRANSFORMERS
title	SPIN ORBIT TORQUE MAGNETIC MEMORY DEVICES, OPERATING METHODS THEREOF, AND ELECTRONIC APPARATUSES INCLUDING THE MAGNETIC MEMORY DEVICES
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T20%3A15%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Okada,%20Atsushi&rft.date=2024-05-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024147868A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true