SPIN ORBIT TORQUE MAGNETIC MEMORY DEVICES, OPERATING METHODS THEREOF, AND ELECTRONIC APPARATUSES INCLUDING THE MAGNETIC MEMORY DEVICES

SPIN ORBIT TORQUE MAGNETIC MEMORY DEVICES, OPERATING METHODS THEREOF, AND ELECTRONIC APPARATUSES INCLUDING THE MAGNETIC MEMORY DEVICES

Disclosed are a spin orbit torque (SOT) magnetic memory device, an operating method thereof, and an electronic apparatus including the SOT magnetic memory device. The SOT magnetic memory device includes a first SOT layer, a magnetic tunnel junction (MTJ) layer on one surface of the first SOT layer,...

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Bibliographische Detailangaben
Hauptverfasser: Okada, Atsushi, MIZUSAKI, Soichiro, Ryu, Jeongchun, Kim, Kwangseok
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
MAGNETS
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
STATIC STORES
TRANSFORMERS
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Beschreibung
Zusammenfassung:Disclosed are a spin orbit torque (SOT) magnetic memory device, an operating method thereof, and an electronic apparatus including the SOT magnetic memory device. The SOT magnetic memory device includes a first SOT layer, a magnetic tunnel junction (MTJ) layer on one surface of the first SOT layer, and an SOT-based local magnetic field generation layer to cross the first SOT layer and including a generating region configured to generate a magnetic field that reaches the MTJ layer; and an upper electrode layer disposed to face the first SOT layer with the MTJ layer therebetween and in contact with the MTJ layer. The SOT magnetic memory device includes five operating terminals.