THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DOPED SOURCE-CHANNEL INTERFACE STRUCTURE AND METHOD OF MAKING THE SAME

A memory device includes source-level material layers including a source contact layer, an alternating stack of insulating layers and electrically conductive layers located over the source-level material layers, a memory opening vertically extending through the alternating stack and the source conta...

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Bibliographische Detailangaben
Hauptverfasser: YUDA, Takashi, OGAWA, Hiroyuki, OHAGA, Motoo, NAKAMURA, Tadashi, FUJIMURA, Nobuyuki
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A memory device includes source-level material layers including a source contact layer, an alternating stack of insulating layers and electrically conductive layers located over the source-level material layers, a memory opening vertically extending through the alternating stack and the source contact layer, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel including an intrinsic or first conductivity type semiconductor material, a memory film surrounding the vertical semiconductor channel, and a conical source pedestal in contact with the source contact layer and in contact with a bottom surface of the vertical semiconductor channel, such that at least portion of the conical source pedestal includes a second conductivity type semiconductor material.