SEMICONDUCTOR STRUCTURES INCLUDING CONDUCTING STRUCTURE AND METHODS FOR MAKING THE SAME

The present disclosure relates to semiconductor structures and methods for making the same. The semiconductor structure comprises a first insulation layer, a first semiconductor layer, and a conducting structure. The first semiconductor layer is over the first insulation layer. The first semiconductor layer comprises a first transistor. The first transistor comprises a first source region, a first drain region, and a first channel region under a first gate disposed over the first semiconductor layer. The conducting structure is disposed under the first channel region and spaced apart from the first drain region. The conducting structure is disposed over the first insulation layer and either within or in contact with the first semiconductor layer.