RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD

RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD

A resistive memory device including at least one first electrode based on a first metal and a second electrode based on a second metal, and a memory element in the form of a metal filament based on a third metal and inserted between the first and second electrodes, the memory element having a filame...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHARPIN-NICOLLE, Christelle, MAGIS, Thomas, GASSILLOUD, Rémy, BLONKOWSKI, Serge
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A resistive memory device including at least one first electrode based on a first metal and a second electrode based on a second metal, and a memory element in the form of a metal filament based on a third metal and inserted between the first and second electrodes, the memory element having a filament cross-section strictly smaller than the electrode cross-sections, wherein the third metal has a chemical composition, different from those of the first and second metals giving it an etching speed greater than those of the first and second metals, preferably such that the selectivity at the etching is greater than or equal to 3:1, vis-á-vis the first and second metals. A method for manufacturing such a device is also disclosed.