FLAME DOPING METHOD

FLAME DOPING METHOD

One embodiment of the present invention provides a flame doping method. Specifically, the present invention provides a flame doping method, which does not significantly change crystallinity, does not damage a substrate even while applying a high temperature, is usable as a doping method suitable for...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KIM, Jung Kyu, SO, Won, KWAK, Eu Jin, KIM, Jae Kyum
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:One embodiment of the present invention provides a flame doping method. Specifically, the present invention provides a flame doping method, which does not significantly change crystallinity, does not damage a substrate even while applying a high temperature, is usable as a doping method suitable for mass production, is advantageous in a process difficulty and a cost compared to other doping processes (thermal diffusion and ion implantation), and has high process stability.