MRAM DEVICE STRUCTURE WITH IMPROVED TOP ELECTRODE

Embodiments of present invention provide a method of forming a MRAM structure. The method includes forming a sacrificial dielectric layer on top of a bottom contact; forming a stack of a first ferromagnetic layer, a tunnel barrier layer, a second ferromagnetic layer, and at least one hard mask on top of the sacrificial dielectric layer; forming an interlevel-dielectric (ILD) layer surrounding the stack; creating one or more via holes in the ILD layer to expose the sacrificial dielectric layer; selectively removing the sacrificial dielectric layer to create an opening underneath the first ferromagnetic layer; filling the opening with a first conductive material to form a bottom electrode; removing the at least one hard mask to expose the second ferromagnetic layer; and forming a top electrode of a second conductive material on top of the second ferromagnetic layer. An MRAM structure formed thereby is also provided.