NON-VOLATILE MEMORY WITH OVERDRIVE VOLTAGE ZONING TO COMPENSATE FOR REDUCED MARGINS

NON-VOLATILE MEMORY WITH OVERDRIVE VOLTAGE ZONING TO COMPENSATE FOR REDUCED MARGINS

During a read operation for memory cells connected a selected word line, a memory system adjusts the overdrive voltage applied to word lines adjacent the selected word line in order to compensate for margin degradation between the erased data state and the lowest programmed data state.

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Bibliographische Detailangaben
Hauptverfasser: Li, Jia, Wan, Zhenni, Lei, Bo, Wang, Peng, Liu, Yihang
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:During a read operation for memory cells connected a selected word line, a memory system adjusts the overdrive voltage applied to word lines adjacent the selected word line in order to compensate for margin degradation between the erased data state and the lowest programmed data state.