METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE USING DUAL WATER VAPOR FLOW OXIDATION AND APPARATUS FOR PERFORMING THE SAME

METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE USING DUAL WATER VAPOR FLOW OXIDATION AND APPARATUS FOR PERFORMING THE SAME

A method includes forming a first portion of a layer over a substrate by flowing a reactant gas past the substrate in a first direction, and forming a second portion of the layer on the first portion of the layer by flowing the reactant gas past the substrate in a second direction different from the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HASHIMOTO, Hiraku, TAKII, Eisuke, KOYAMA, Shin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method includes forming a first portion of a layer over a substrate by flowing a reactant gas past the substrate in a first direction, and forming a second portion of the layer on the first portion of the layer by flowing the reactant gas past the substrate in a second direction different from the first direction.