SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE

A method of fabricating a semiconductor device is provided. The method includes: loading a substrate into a substrate processing apparatus; and processing the substrate, using the substrate processing apparatus. The processing the substrate includes: providing a process gas; generating a process etc...

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Bibliographische Detailangaben
Hauptverfasser: JEONG, In Hye, PARK, Sung Yong, SEO, Myoung Jae, KANG, Sung Gil, LEE, Woo Rim, DOH, Hyun Ho
Format: Patent
Sprache:eng
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Zusammenfassung:A method of fabricating a semiconductor device is provided. The method includes: loading a substrate into a substrate processing apparatus; and processing the substrate, using the substrate processing apparatus. The processing the substrate includes: providing a process gas; generating a process etchant from the process gas, using plasma ignition, the process etchant including a first etchant and a second etchant; processing the substrate, using the process etchant; identifying a composition rate of the process etchant; and controlling the processing of the substrate based on a process result according to the composition rate of the process etchant.