LIGHT-EMITTING DIODE AND LIGHT-EMITTING DEVICE

The invention discloses a light-emitting diode and a light-emitting device. The light-emitting diode includes a semiconductor epitaxial stack having first and second surfaces opposite to each other and including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer stacked in sequence in a direction from the first surface to the second surface. The active layer includes n periods of quantum well structure, and each period of quantum well structure includes a well layer and a barrier layer deposited sequentially. A first spacer layer is disposed between the first-type semiconductor layer and the active layer, and a ratio of a thickness (nm) of the first spacer layer to a current density (A/cm2) of the light-emitting diode ranges from 0 to 10. In the invention, the thickness of the first spacer layer is adjusted according to the current density of the light-emitting diode to improve the luminous efficiency of the light-emitting diode.