STRUCTURE FOR HYBRID BOND CRACKSTOP WITH AIRGAPS

A hybrid bonded semiconductor structure includes a first substrate and a second substrate each having an interface joined in a hybrid bond. Each substrate has a die portion and a crackstop structure adjacent the die portion. One or more voids in the first substrate and the second substrate are forme...

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Bibliographische Detailangaben
Hauptverfasser:	Perfecto, Eric, Belyansky, Michael P, Skordas, Spyridon, Polomoff, Nicholas Alexander, Farooq, Mukta Ghate, Sakuma, Katsuyuki, Raghavan, Sathyanarayanan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A hybrid bonded semiconductor structure includes a first substrate and a second substrate each having an interface joined in a hybrid bond. Each substrate has a die portion and a crackstop structure adjacent the die portion. One or more voids in the first substrate and the second substrate are formed in or about a portion of a periphery of each crackstop structure. At least some of the one or more voids in the first substrate and the second substrate are substantially aligned to form a unified void with airgaps across the hybrid bond interface.