PROCESS FOR DEPOSITION OF AN OUTER LAYER, REFLECTIVE OPTICAL ELEMENT FOR THE EUV WAVELENGTH RANGE AND EUV LITHOGRAPHY SYSTEM

A method of depositing an outer layer (35) on a surface (36) of a reflective optical element (30) for the EUV wavelength range, wherein the depositing is effected in at least one macro cycle (37). The macro cycle (37) includes: at least partly depositing the outer layer (35) with an atomic layer dep...

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Bibliographische Detailangaben
Hauptverfasser:	EHM, Dirk, MAMELI, Alfredo, ROOZEBOOM, Fred, SCHMIDT, Stefan
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTROGRAPHY HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS THEREFOR METALLURGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method of depositing an outer layer (35) on a surface (36) of a reflective optical element (30) for the EUV wavelength range, wherein the depositing is effected in at least one macro cycle (37). The macro cycle (37) includes: at least partly depositing the outer layer (35) with an atomic layer deposition (ALD) process in at least one ALD cycle and partly back-etching the outer layer (35). Also disclosed is a reflective optical element (30) for the extreme ultraviolet (EUV) wavelength range which includes a surface (36) having an outer layer (35), wherein the outer layer (35) is deposited by the above-described method, and to an EUV lithography system having at least one such reflective optical element (30).