PHASE-CHANGE MEMORY STRUCTURE AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME

PHASE-CHANGE MEMORY STRUCTURE AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME

A phase-change memory structure includes lower and upper electrodes spaced apart from each other, and a phase-change material stack between the lower and upper electrodes. The phase-change material stack includes a plurality of phase-change layers, at least two phase-change layers of the plurality o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Yang, Kiyeon, Sung, Hajun, Kang, Youngjae, LEE, Changseung, Ahn, Dongho
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A phase-change memory structure includes lower and upper electrodes spaced apart from each other, and a phase-change material stack between the lower and upper electrodes. The phase-change material stack includes a plurality of phase-change layers, at least two phase-change layers of the plurality of phase-change layers have different phase-change temperatures, and a plurality of barrier layers between the plurality of phase-change layers The at least two phase-change layers of the plurality of phase-change layers have different thicknesses.